一.对于stm32内部flash读写解读：_stm32f4 写flash

对于stm32内部flash读写解读：

1.stm32其内部本身有一块flash其扇区分布：


其中主存储去为数据存储区别：剩下的扇区则是flash内部一般不去改变的区域。
而对于内部flash的读写操作主要围绕主存储区展开。
以stm32f4为例,对于不同的芯片其大小是有区别的，但起始扇区却是固定的0x800 0000；

//为此可以在 xx_flash头文件中添加扇区起始地址的宏定义
#define ADDR_FLASH_SECTOR_0     ((uint32_t)0x08000000) /* Base address of Sector 0, 16 Kbytes   */
#define ADDR_FLASH_SECTOR_1     ((uint32_t)0x08004000) /* Base address of Sector 1, 16 Kbytes   */
#define ADDR_FLASH_SECTOR_2     ((uint32_t)0x08008000) /* Base address of Sector 2, 16 Kbytes   */
#define ADDR_FLASH_SECTOR_3     ((uint32_t)0x0800C000) /* Base address of Sector 3, 16 Kbytes   */
#define ADDR_FLASH_SECTOR_4     ((uint32_t)0x08010000) /* Base address of Sector 4, 64 Kbytes   */
#define ADDR_FLASH_SECTOR_5     ((uint32_t)0x08020000) /* Base address of Sector 5, 128 Kbytes  */
#define ADDR_FLASH_SECTOR_6     ((uint32_t)0x08040000) /* Base address of Sector 6, 128 Kbytes  */
#define ADDR_FLASH_SECTOR_7     ((uint32_t)0x08060000) /* Base address of Sector 7, 128 Kbytes  */
#define ADDR_FLASH_SECTOR_8     ((uint32_t)0x08080000) /* Base address of Sector 8, 128 Kbytes  */
#define ADDR_FLASH_SECTOR_9     ((
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